SSD20P06-135D p-ch enhancement mode power mosfet 16a, -60v, r ds(on) 135m elektronische bauelemente 25-aug-2010 rev.b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications ar e dc-dc converters and power management in portable and battery-powered produc ts such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe dpak saves board space. ? fast switching speed. ? high performance trench technology.. product summary product summary v ds (v) r ds (on) m( ? ? i d (a) -60 135@v gs = -10v 16 190@v gs = -4.5v 14 absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v continuous drain current a i d 16 a pulsed drain current b i dm 40 a continuous source current (diode conduction) a i s -15 a total power dissipation a p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient a r ja 50 c / w maximum thermal resist ance junction-case r jc 3.0 c / w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain
SSD20P06-135D p-ch enhancement mode power mosfet 16a, -60v, r ds(on) 135m elektronische bauelemente 25-aug-2010 rev.b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate-threshold voltage v gs(th) -1 - - v ds = v gs, i d = -250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - -1 a v ds = -48v, v gs = 0v - - -10 v ds = -48v, v gs =0v, t j =55c on-state drain current a i d(on) -20 - - a v ds = -5v, v gs = -10v drain-source on-resistance a r ds(on) - - 135 m ? v gs = -10v, i d = -28a - - 190 v gs = -4.5v, i d = -14a forward transconductance a g fs - 8 - s v ds = -15v, i d = -28a diode forward voltage v sd - - -1.2 v i s = -2.5 a, v gs = 0 v dynamic b total gate charge q g - 18 - nc v ds = -30 v v gs = -4.5 v i d = -28 a gate-source charge q gs - 5 - gate-drain charge q gd - 2 - input capacitance c iss - 570 - pf v ds = -15 v v gs = 0 v f = 1mhz output capacitance c oss - 80 - reverse transfer capacitance c rss - 40 - turn-on delay time t d(on) - 8 - ns v dd = -30 v i d = -1 a v gen = -10 v r l = 30 ? r g = 6 ? rise time t r - 10 - turn-off delay time t d(off) - 35 - fall time t f - 12 - notes a. pulse test pulse width Q 300 s, duty cycle Q 2 . b. guaranteed by design, not s ubject to production testing.
SSD20P06-135D p-ch enhancement mode power mosfet 16a, -60v, r ds(on) 135m elektronische bauelemente 25-aug-2010 rev.b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSD20P06-135D p-ch enhancement mode power mosfet 16a, -60v, r ds(on) 135m elektronische bauelemente 25-aug-2010 rev.b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
